High temperature bipolar electrostatic chuck

ABSTRACT

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The first bipolar electrode may include at least two separated mesh sections, with each mesh section characterized by a circular sector shape. The substrate support assemblies may include a second bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The second bipolar electrode may include a continuous mesh extending through the at least two separated mesh sections of the first bipolar electrode.

CROSS-REFERENCES TO RELATED APPLICATIONS

This patent application is a continuation of U.S. application Ser. No.17/076,649 filed on Oct. 21, 2020, which is incorporated herein byreference.

TECHNICAL FIELD

The present technology relates to components and apparatuses forsemiconductor manufacturing. More specifically, the present technologyrelates to substrate support assemblies and other semiconductorprocessing equipment.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Producingpatterned material on a substrate requires controlled methods forforming and removing material. The temperature at which these processesoccur may directly impact the final product. Substrate temperatures areoften controlled and maintained with the assembly supporting thesubstrate during processing. Internally located heating devices maygenerate heat within the support, and the heat may be transferredconductively to the substrate. The substrate support may also beutilized in some technologies to develop a substrate-level plasma, aswell as to chuck the substrate to the support electrostatically. Plasmagenerated near the substrate may cause bombardment of components, aswell as parasitic plasma formation in unfavorable regions of thechamber. The conditions may also lead to discharge between substratesupport electrodes. Additionally, utilizing the pedestal for both heatgeneration and plasma generation may cause interference effects.

As a variety of operational processes may utilize increased temperatureas well as substrate-level plasma formation, constituent materials ofthe substrate support may be exposed to temperatures that affect theelectrical operations of the assembly. Thus, there is a need forimproved systems and methods that can be used to produce high qualitydevices and structures. These and other needs are addressed by thepresent technology.

SUMMARY

Exemplary support assemblies may include an electrostatic chuck bodydefining a substrate support surface. The substrate support assembliesmay include a support stem coupled with the electrostatic chuck body.The substrate support assemblies may include a heater embedded withinthe electrostatic chuck body. The substrate support assemblies mayinclude a first bipolar electrode embedded within the electrostaticchuck body between the heater and the substrate support surface. Thefirst bipolar electrode may include at least two separated meshsections, with each mesh section characterized by a circular sectorshape. The substrate support assemblies may include a second bipolarelectrode embedded within the electrostatic chuck body between theheater and the substrate support surface. The second bipolar electrodemay include a continuous mesh extending through the at least twoseparated mesh sections of the first bipolar electrode

In some embodiments, the second bipolar electrode may be or include twomesh sections coupled by a bridge between the at least two separatedmesh sections of the first bipolar electrode. The two mesh sections ofthe second bipolar electrode may be characterized by a circular sectorshape. The assemblies may include an RF power supply or variablecapacitor coupled with both of the first bipolar electrode and thesecond bipolar electrode. The at least two separated mesh sections ofthe first bipolar electrode may include four mesh sections separatedfrom one another with gaps. The second bipolar electrode may include anannular mesh extending about the four mesh sections of the first bipolarelectrode. The annular mesh may include bridges extending through thegaps between the separated mesh sections of the first bipolar electrode.The assemblies may include a first RF power supply or variable capacitorcoupled with the first bipolar electrode. The assemblies may include asecond RF power supply or variable capacitor coupled with the secondbipolar electrode. The assemblies may include a first DC power supplycoupled with the first bipolar electrode. The assemblies may include asecond DC power supply coupled with the second bipolar electrode. Theassemblies may include a third electrode positioned radially outwardfrom and extending about the first bipolar electrode and the secondbipolar electrode. The assemblies may include a third RF power supply orvariable capacitor coupled with the third electrode. A plurality of leadlines may extend within the electrostatic chuck body to couple the thirdelectrode with the third RF power supply or variable capacitor. Theelectrostatic chuck body may be or include a ceramic material. Theceramic material may be or include aluminum nitride.

Some embodiments of the present technology may encompass substratesupport assemblies. The assemblies may include an electrostatic chuckbody defining a substrate support surface. The assemblies may include asupport stem coupled with the electrostatic chuck body. The assembliesmay include a first bipolar electrode embedded within the electrostaticchuck body beneath the substrate support surface. The first bipolarelectrode may include at least two mesh sections separated by a gap. Theassemblies may include a second bipolar electrode embedded within theelectrostatic chuck body beneath the substrate support surface. Thesecond bipolar electrode may extend through the gap between the at leasttwo mesh sections of the first bipolar electrode.

In some embodiments, each mesh section of the first bipolar electrodemay be characterized by a circular sector shape. The second bipolarelectrode may include an annular mesh extending about the at least twomesh sections of the first bipolar electrode. The annular mesh mayinclude a bridge extending through the gap between the at least two meshsections of the first bipolar electrode. The assemblies may include afirst RF power supply or variable capacitor coupled with the firstbipolar electrode. The assemblies may include a second RF power supplyor variable capacitor coupled with the second bipolar electrode. Theassemblies may include a third electrode positioned radially outwardfrom and extending about the first bipolar electrode and the secondbipolar electrode. The assemblies may include a third RF power supply orvariable capacitor coupled with the third electrode. The assemblies mayinclude a first DC power supply coupled with the first bipolarelectrode. The assemblies may include a second DC power supply coupledwith the second bipolar electrode.

Some embodiments of the present technology may encompass substratesupport assemblies. The assemblies may include an electrostatic chuckbody defining a substrate support surface. The assemblies may include asupport stem coupled with the electrostatic chuck body. The assembliesmay include a first bipolar electrode embedded within the electrostaticchuck body beneath the substrate support surface. The first bipolarelectrode may include at least two mesh sections separated by a gap. Theassemblies may include a second bipolar electrode embedded within theelectrostatic chuck beneath the substrate support surface. Theassemblies may include a third electrode positioned radially outwardfrom and extending about the first bipolar electrode and the secondbipolar electrode.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, embodiments of the present technology mayprovide substrate supports that may allow radial tuning during plasmaprocessing, and may remain sustainable during high-temperatureoperations. Additionally, the substrate supports may maintain bipolarchucking while supporting RF modulation. These and other embodiments,along with many of their advantages and features, are described in moredetail in conjunction with the below description and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a top plan view of an exemplary processing system accordingto some embodiments of the present technology.

FIG. 2 shows a schematic cross-sectional view of an exemplary plasmasystem according to some embodiments of the present technology.

FIG. 3 shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to some embodiments of the presenttechnology.

FIG. 4A shows a schematic top view of an electrode arrangement for anexemplary substrate support assembly according to some embodiments ofthe present technology.

FIG. 4B shows a schematic partial cross-sectional view of an electrodearrangement for an exemplary substrate support assembly according tosome embodiments of the present technology.

FIG. 4C shows a schematic partial cross-sectional view of an electrodearrangement for an exemplary substrate support assembly according tosome embodiments of the present technology.

FIG. 5A shows a schematic top view of an electrode arrangement for anexemplary substrate support assembly according to some embodiments ofthe present technology.

FIG. 5B shows a schematic partial cross-sectional view of an electrodearrangement for an exemplary substrate support assembly according tosome embodiments of the present technology.

FIG. 6A shows a schematic top view of an electrode arrangement for anexemplary substrate support assembly according to some embodiments ofthe present technology.

FIG. 6B shows a schematic partial cross-sectional view of an electrodearrangement for an exemplary substrate support assembly according tosome embodiments of the present technology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include exaggerated material forillustrative purposes.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

Plasma enhanced deposition processes may energize one or moreconstituent precursors to facilitate film formation on a substrate.These formed films may be produced under conditions that cause stresseson the substrate. An electrostatic chuck may be used to produce aclamping action against the substrate to overcome the bowing stress.However, as semiconductor processing continues to increase precision andreduce device sizes, chucking may participate in issues with processing.Additionally, many of these films may be developed at relatively hightemperatures that further affect components of the chamber. For example,some deposition activities may occur at temperatures above 500° C. orhigher, which may affect the resistivity of chamber components, such asthe materials of the electrostatic chuck. As the resistivity of thematerial reduces, current leakage may increase and lead to electric arcsbeing produced, which can damage substrates and chamber components.

Many conventional technologies use a monopolar or semicircular electrodebipolar electrostatic chuck, which may lead to many of these processingissues. While the chucks may provide chucking force to stabilize asubstrate during processing, the chucks may be otherwise limited, andmay contribute to issues with processing. For example, monopolar chucksmay cause substrate movement, which can impact process uniformity byshifting a chuck from a central location within the processing chamber.A monopolar chuck utilizes plasma generated during the process to createelectrostatic force on the substrate. When a substrate is seated on asupport and a monopolar chuck is initially engaged, the wafer may beelectrically floating relative to the DC power source of the chuckingelectrode because the puck body may be insulative. When a plasma isgenerated, the plasma may ground the substrate, which may effectivelycomplete the circuit and create an electrostatic force between thesubstrate and chuck body. However, the initial generation may causemovement of the substrate, which may impact uniformity duringprocessing.

Conventional bipolar chucks may include two semicircular electrodes,which may overcome issues with the monopolar chuck by coupling oneelectrode at positive power and one at negative power. Although thesubstrate will still be characterized by a net neutral charge, thesubstrate may be clamped to the substrate support. However, asprocessing temperatures are raised, leakage through the chuck body mayincrease, which may increase a likelihood of DC discharge between thetwo electrodes. An additional issue with both chucks is that they may belimited in additional functionality in terms of plasma tuning.

The present technology overcomes these challenges with substrate supportassemblies having bipolar chucking capabilities and additionallyproviding radial tuning capabilities with the plasma. Radialnon-uniformity on a substrate may be caused by a number of issues withflow through the chamber. Although some chamber components may bemodified to accommodate certain uniformity issues, once the component isimplemented it may be limited to that exact accommodation. By providingradial RF tuning with electrodes in the electrostatic chuck, the presenttechnology may allow center-high and edge-high modulation of processingregion plasma development. Additionally, by adjusting the power suppliedor drawn by these electrodes, the degree of adjustment can be tuned forany particular process exhibiting non-uniformity.

Although the remaining disclosure will routinely identify specificdeposition processes utilizing the disclosed technology, it will bereadily understood that the systems and methods are equally applicableto other deposition, etching, and cleaning chambers, as well asprocesses as may occur in the described chambers. Accordingly, thetechnology should not be considered to be so limited as for use withthese specific deposition processes or chambers alone. The disclosurewill discuss one possible system and chamber that may include pedestalsaccording to embodiments of the present technology before additionalvariations and adjustments to this system according to embodiments ofthe present technology are described.

FIG. 1 shows a top plan view of one embodiment of a processing system100 of deposition, etching, baking, and curing chambers according toembodiments. In the figure, a pair of front opening unified pods 102supply substrates of a variety of sizes that are received by roboticarms 104 and placed into a low pressure holding area 106 before beingplaced into one of the substrate processing chambers 108 a-f, positionedin tandem sections 109 a-c. A second robotic arm 110 may be used totransport the substrate wafers from the holding area 106 to thesubstrate processing chambers 108 a-f and back. Each substrateprocessing chamber 108 a-f, can be outfitted to perform a number ofsubstrate processing operations including formation of stacks ofsemiconductor materials described herein in addition to plasma-enhancedchemical vapor deposition, atomic layer deposition, physical vapordeposition, etch, pre-clean, degas, orientation, and other substrateprocesses including, annealing, ashing, etc.

The substrate processing chambers 108 a-f may include one or more systemcomponents for depositing, annealing, curing and/or etching a dielectricor other film on the substrate. In one configuration, two pairs of theprocessing chambers, e.g., 108 c-d and 108 e-f, may be used to depositdielectric material on the substrate, and the third pair of processingchambers, e.g., 108 a-b, may be used to etch the deposited dielectric.In another configuration, all three pairs of chambers, e.g., 108 a-f,may be configured to deposit stacks of alternating dielectric films onthe substrate. Any one or more of the processes described may be carriedout in chambers separated from the fabrication system shown in differentembodiments. It will be appreciated that additional configurations ofdeposition, etching, annealing, and curing chambers for dielectric filmsare contemplated by system 100.

FIG. 2 shows a schematic cross-sectional view of an exemplary plasmasystem 200 according to some embodiments of the present technology.Plasma system 200 may illustrate a pair of processing chambers 108 thatmay be fitted in one or more of tandem sections 109 described above, andwhich may include substrate support assemblies according to embodimentsof the present technology. The plasma system 200 generally may include achamber body 202 having sidewalls 212, a bottom wall 216, and aninterior sidewall 201 defining a pair of processing regions 220A and220B. Each of the processing regions 220A-220B may be similarlyconfigured, and may include identical components.

For example, processing region 220B, the components of which may also beincluded in processing region 220A, may include a pedestal 228 disposedin the processing region through a passage 222 formed in the bottom wall216 in the plasma system 200. The pedestal 228 may provide a heateradapted to support a substrate 229 on an exposed surface of thepedestal, such as a body portion. The pedestal 228 may include heatingelements 232, for example resistive heating elements, which may heat andcontrol the substrate temperature at a desired process temperature.Pedestal 228 may also be heated by a remote heating element, such as alamp assembly, or any other heating device.

The body of pedestal 228 may be coupled by a flange 233 to a stem 226.The stem 226 may electrically couple the pedestal 228 with a poweroutlet or power box 203. The power box 203 may include a drive systemthat controls the elevation and movement of the pedestal 228 within theprocessing region 220B. The stem 226 may also include electrical powerinterfaces to provide electrical power to the pedestal 228. The powerbox 203 may also include interfaces for electrical power and temperatureindicators, such as a thermocouple interface. The stem 226 may include abase assembly 238 adapted to detachably couple with the power box 203. Acircumferential ring 235 is shown above the power box 203. In someembodiments, the circumferential ring 235 may be a shoulder adapted as amechanical stop or land configured to provide a mechanical interfacebetween the base assembly 238 and the upper surface of the power box203.

A rod 230 may be included through a passage 224 formed in the bottomwall 216 of the processing region 220B and may be utilized to positionsubstrate lift pins 261 disposed through the body of pedestal 228. Thesubstrate lift pins 261 may selectively space the substrate 229 from thepedestal to facilitate exchange of the substrate 229 with a robotutilized for transferring the substrate 229 into and out of theprocessing region 220B through a substrate transfer port 260.

A chamber lid 204 may be coupled with a top portion of the chamber body202. The lid 204 may accommodate one or more precursor distributionsystems 208 coupled thereto. The precursor distribution system 208 mayinclude a precursor inlet passage 240 which may deliver reactant andcleaning precursors through a dual-channel showerhead 218 into theprocessing region 220B. The dual-channel showerhead 218 may include anannular base plate 248 having a blocker plate 244 disposed intermediateto a faceplate 246. A radio frequency (“RF”) source 265 may be coupledwith the dual-channel showerhead 218, which may power the dual-channelshowerhead 218 to facilitate generating a plasma region between thefaceplate 246 of the dual-channel showerhead 218 and the pedestal 228.In some embodiments, the RF source may be coupled with other portions ofthe chamber body 202, such as the pedestal 228, to facilitate plasmageneration. A dielectric isolator 258 may be disposed between the lid204 and the dual-channel showerhead 218 to prevent conducting RF powerto the lid 204. A shadow ring 206 may be disposed on the periphery ofthe pedestal 228 that engages the pedestal 228.

An optional cooling channel 247 may be formed in the annular base plate248 of the gas distribution system 208 to cool the annular base plate248 during operation. A heat transfer fluid, such as water, ethyleneglycol, a gas, or the like, may be circulated through the coolingchannel 247 such that the base plate 248 may be maintained at apredefined temperature. A liner assembly 227 may be disposed within theprocessing region 220B in close proximity to the sidewalls 201, 212 ofthe chamber body 202 to prevent exposure of the sidewalls 201, 212 tothe processing environment within the processing region 220B. The linerassembly 227 may include a circumferential pumping cavity 225, which maybe coupled to a pumping system 264 configured to exhaust gases andbyproducts from the processing region 220B and control the pressurewithin the processing region 220B. A plurality of exhaust ports 231 maybe formed on the liner assembly 227. The exhaust ports 231 may beconfigured to allow the flow of gases from the processing region 220B tothe circumferential pumping cavity 225 in a manner that promotesprocessing within the system 200.

FIG. 3 shows a schematic partial cross-sectional view of an exemplarysemiconductor processing chamber 300 according to some embodiments ofthe present technology. FIG. 3 may include one or more componentsdiscussed above with regard to FIG. 2 , and may illustrate furtherdetails relating to that chamber. The chamber 300 may be used to performsemiconductor processing operations including deposition of stacks ofdielectric materials as previously described. Chamber 300 may show apartial view of a processing region of a semiconductor processingsystem, and may not include all of the components, such as additionallid stack components previously described, which are understood to beincorporated in some embodiments of chamber 300.

As noted, FIG. 3 may illustrate a portion of a processing chamber 300.The chamber 300 may include a showerhead 305, as well as a substratesupport assembly 310. Along with chamber sidewalls 315, the showerhead305 and the substrate support 310 may define a substrate processingregion 320 in which plasma may be generated. The substrate supportassembly may include an electrostatic chuck body 325, which may includeone or more components embedded or disposed within the body. Thecomponents incorporated within the top puck may not be exposed toprocessing materials in some embodiments, and may be fully retainedwithin the chuck body 325. Electrostatic chuck body 325 may define asubstrate support surface 327, and may be characterized by a thicknessand length or diameter depending on the specific geometry of the chuckbody. In some embodiments the chuck body may be elliptical, and may becharacterized by one or more radial dimensions from a central axisthrough the chuck body. It is to be understood that the top puck may beany geometry, and when radial dimensions are discussed, they may defineany length from a central position of the chuck body.

Electrostatic chuck body 325 may be coupled with a stem 330, which maysupport the chuck body and may include channels for delivering andreceiving electrical and/or fluid lines that may couple with internalcomponents of the chuck body 325. Chuck body 325 may include associatedchannels or components to operate as an electrostatic chuck, although insome embodiments the assembly may operate as or include components for avacuum chuck, or any other type of chucking system. Stem 330 may becoupled with the chuck body on a second surface of the chuck bodyopposite the substrate support surface. The electrostatic chuck body 325may include a first bipolar electrode 335 a, which may be embeddedwithin the chuck body proximate the substrate support surface. Electrode335 a may be electrically coupled with a DC power source 340 a. Powersource 340 a may be configured to provide energy or voltage to theelectrically conductive chuck electrode 335 a. This may be operated toform a plasma of a precursor within the processing region 320 of thesemiconductor processing chamber 300, although other plasma operationsmay similarly be sustained. For example, electrode 335 a may also be achucking mesh that operates as electrical ground for a capacitive plasmasystem including an RF source 307 electrically coupled with showerhead305. For example, electrode 335 a may operate as a ground path for RFpower from the RF source 307, while also operating as an electric biasto the substrate to provide electrostatic clamping of the substrate tothe substrate support surface. Power source 340 a may include a filter,a power supply, and a number of other electrical components configuredto provide a chucking voltage.

The electrostatic chuck body may also include a second bipolar electrode335 b, which may also be embedded within the chuck body proximate thesubstrate support surface. Electrode 335 b may be electrically coupledwith a DC power source 340 b. Power source 340 b may be configured toprovide energy or voltage to the electrically conductive chuck electrode335 b. Additionally electrical components and details about bipolarchucks according to some embodiments will be described further below,and any of the designs may be implemented with processing chamber 300.For example, additional plasma related power supplies or components maybe incorporated as will be explained further below.

In operation, a substrate may be in at least partial contact with thesubstrate support surface of the electrostatic chuck body, which mayproduce a contact gap, and which may essentially produce a capacitiveeffect between a surface of the pedestal and the substrate. Voltage maybe applied to the contact gap, which may generate an electrostatic forcefor chucking. The power supplies 340 a and 340 b may provide electriccharge that migrates from the electrode to the substrate support surfacewhere it may accumulate, and which may produce a charge layer havingCoulomb attraction with opposite charges at the substrate, and which mayelectrostatically hold the substrate against the substrate supportsurface of the chuck body. This charge migration may occur by currentflowing through a dielectric material of the chuck body based on afinite resistance within the dielectric for Johnsen-Rahbek typechucking, which may be used in some embodiments of the presenttechnology.

Chuck body 325 may also define a recessed region 345 within thesubstrate support surface, which may provide a recessed pocket in whicha substrate may be disposed. Recessed region 345 may be formed at aninterior region of the top puck and may be configured to receive asubstrate for processing. Recessed region 345 may encompass a centralregion of the electrostatic chuck body as illustrated, and may be sizedto accommodate any variety of substrate sizes. A substrate may be seatedwithin the recessed region, and contained by an exterior region 347,which may encompass the substrate. In some embodiments the height ofexterior region 347 may be such that a substrate is level with orrecessed below a surface height of the substrate support surface atexterior region 347. A recessed surface may control edge effects duringprocessing, which may improve uniformity of deposition across thesubstrate in some embodiments. In some embodiments, an edge ring may bedisposed about a periphery of the top puck, and may at least partiallydefine the recess within which a substrate may be seated. In someembodiments, the surface of the chuck body may be substantially planar,and the edge ring may fully define the recess within which the substratemay be seated.

In some embodiments the electrostatic chuck body 325 and/or the stem 330may be insulative or dielectric materials. For example, oxides,nitrides, carbides, and other materials may be used to form thecomponents. Exemplary materials may include ceramics, including aluminumoxide, aluminum nitride, silicon carbide, tungsten carbide, and anyother metal or transition metal oxide, nitride, carbide, boride, ortitanate, as well as combinations of these materials and otherinsulative or dielectric materials. Different grades of ceramicmaterials may be used to provide composites configured to operate atparticular temperature ranges, and thus different ceramic grades ofsimilar materials may be used for the top puck and stem in someembodiments. Dopants may be incorporated in some embodiments to adjustelectrical properties as well. Exemplary dopant materials may includeyttrium, magnesium, silicon, iron, calcium, chromium, sodium, nickel,copper, zinc, or any number of other elements known to be incorporatedwithin a ceramic or dielectric material.

Electrostatic chuck body 325 may also include an embedded heater 350contained within the chuck body. Heater 350 may include a resistiveheater or a fluid heater in embodiments. In some embodiments theelectrode 335 may be operated as the heater, but by decoupling theseoperations, more individual control may be afforded, and extended heatercoverage may be provided while limiting the region for plasma formation.Heater 350 may include a polymer heater bonded or coupled with the chuckbody material, although a conductive element may be embedded within theelectrostatic chuck body and configured to receive current, such as ACcurrent, to heat the top puck. The current may be delivered through thestem 330 through a similar channel as the DC power discussed above.Heater 350 may be coupled with a power supply 365, which may providecurrent to a resistive heating element to facilitate heating of theassociated chuck body and/or substrate. Heater 350 may include multipleheaters in embodiments, and each heater may be associated with a zone ofthe chuck body, and thus exemplary chuck bodies may include a similarnumber or greater number of zones than heaters.

The chucking mesh electrodes 335 may be positioned between the heater350 and the substrate support surface 327 in some embodiments, and adistance may be maintained between the electrode within the chuck bodyand the substrate support surface in some embodiments as will bedescribed further below.

The heater 350 may be capable of adjusting temperatures across theelectrostatic chuck body 325, as well as a substrate residing on thesubstrate support surface 327. The heater may have a range of operatingtemperatures to heat the chuck body and/or a substrate above or about100° C., and the heater may be configured to heat above or about 125°C., above or about 150° C., above or about 175° C., above or about 200°C., above or about 250° C., above or about 300° C., above or about 350°C., above or about 400° C., above or about 450° C., above or about 500°C., above or about 550° C., above or about 600° C., above or about 650°C., above or about 700° C., above or about 750° C., above or about 800°C., above or about 850° C., above or about 900° C., above or about 950°C., above or about 1000° C., or higher. The heater may also beconfigured to operate in any range encompassed between any two of thesestated numbers, or smaller ranges encompassed within any of theseranges. In some embodiments, the chuck heater may be operated tomaintain a substrate temperature above at least 500° C. duringdeposition operations.

FIG. 4A shows a schematic top view of an electrode arrangement 400 foran exemplary substrate support assembly according to some embodiments ofthe present technology. Electrodes in arrangement 400 may be any of theelectrodes previously described, such as may be included in substratesupport assembly 310, or any other number of pedestals or chucks. Theelectrodes may be operable as an electrostatic chuck as discussed above,and as will be further described below. As illustrated, electrodearrangement 400 may include a first bipolar electrode 405, and a secondbipolar electrode 410. The electrodes may be embedded in a puck or chuckbody as described above, such as a ceramic including aluminum nitride,and may be characterized by any of the features, configurations, orcharacteristics as discussed above for any substrate support.

First bipolar electrode 405 and second bipolar electrode 410 may eachinclude a mesh material that may be substantially coplanar across bothelectrodes within the electrostatic chuck. As illustrated, the meshmaterials may be separated into sections. For example, first bipolarelectrode 405 may include at least two separated mesh sections 406. Eachmesh section may be characterized by any number of shapes or geometries,such as circular sectors as illustrated, as well as rectangles, or anyother shape, which may be at least in part determined from substrategeometries, for example. Although the sector shapes are substantiallyquadrant shaped, it is to be understood that any minor sector or majorsector shape may be utilized in embodiments of the present technology.The mesh sections 406 may be discontinuous, and in some embodiments maynot contact one another along the plane of the mesh materials. As shown,one or more gaps 408 may be formed about each mesh section 406 of thefirst bipolar electrode 405, and each mesh section may be isolatedwithin the chuck body from any other mesh section of either the firstbipolar electrode or the second bipolar electrode. Although two suchmesh sections are illustrated, in some embodiments first bipolarelectrode 405 may include greater than or about 2 sections, greater thanor about 3 sections, greater than or about 4 sections, greater than orabout 5 sections, greater than or about 6 sections, greater than orabout 7 sections, greater than or about 8 sections, or more. However, asthe number of mesh sections increases, the amount of gap area maysimilarly increase, which may reduce chucking in the regions where nomesh extends. Thus, in some embodiments the mesh may include less thanor about 8 sections, less than or about 6 sections, or less. Electrodeleads may couple with the first bipolar electrode at each mesh section,such as at positions 409, which may be anywhere along the mesh in someembodiments.

Second bipolar electrode 410 may be or include a continuous mesh sectionas illustrated, which may extend through the at least two separated meshsections of the first bipolar electrode 405. For example, asillustrated, second bipolar electrode 410 may extend through a gap 408between sections of the first bipolar electrode as shown. At least oneelectrode lead may couple with the second bipolar electrode at aposition 413 along the electrode. Second bipolar electrode 410 may becharacterized by any shape or geometry as noted above, and may becharacterized by a shape that corresponds or accommodates the shape offirst bipolar electrode 405. For example, where the first bipolarelectrode sections are circular sector shapes as illustrated, secondbipolar electrode 410 may also be characterized by at least two meshsections that may also be circle sector shaped. The sections of secondbipolar electrode 410 may be coupled with a bridge 412 portion thatextends through the gap between the first bipolar electrode sections asillustrated.

As illustrated, in some embodiments the arrangement 400 may include athird electrode 415, which may be located or positioned radially outwardfrom the first bipolar electrode and the second bipolar electrode, andmay extend about the bipolar electrodes as illustrated. In someembodiments the third electrode may be included beneath the exteriorregion 347, for example, or may otherwise be about an edge region of thesubstrate support. Electrode leads may couple with the third electrodeat one or more positions 417 as illustrated. Although four such leadpositions are illustrated, any number of leads may be provided inembodiments to ensure uniform delivery to the electrode. Each of theelectrodes may be coupled with one or more power supplies as can be seenin FIG. 4B. FIG. 4B shows a schematic partial cross-sectional view ofelectrode arrangement 400 for an exemplary substrate support assemblyaccording to some embodiments of the present technology. As shown, thearrangement 400 may include a first bipolar electrode 405 and a secondbipolar electrode 410, where the cross-section may illustrate the secondbipolar electrode 410 through the bridge 412 portion of the mesh. Insome embodiments the arrangement may also include a third electrode 415.

Each electrode may be coupled with one or more power supplies aspreviously described, and FIG. 4B illustrates an exemplary couplingarrangement, although it is to be understood that any number ofelectrode coupling configurations may be used. For example, the firstbipolar electrode sections may be coupled with a first DC power supply420, and the second bipolar electrode may be coupled with a second DCpower supply 425. Either power supply may be operated in a positive ornegative voltage arrangement, which may be switched during processing,for example, as well as increased or decreased in either direction toprovide electrostatic chucking. One or more RF power supplies may alsobe incorporated in some embodiments. For example, a first RF powersupply 430 may be coupled with the third electrode 415, and a second RFpower supply 430 may be coupled with the first bipolar electrode and thesecond bipolar electrode. Although a separate RF power supply may becoupled with each of the bipolar electrodes, as will be described below,in some embodiments a single power supply may be used based on theconfiguration of the electrodes.

In operation, by including a separate RF power supply coupled with thethird electrode, process plasma may be tuned to affect a process beingperformed. For example, in the bottom up

RF power feed configuration illustrated, by increasing RF power to theedge of the chuck, increased current may be delivered to the plasma atthe edge, which may increase plasma characteristics. During a depositionoperation, for example, this may increase edge deposition, which maycompensate for a center-high deposition process to increase radialuniformity of the process. Depending on the extent of thenon-uniformity, the power delivered may be increased or decreased toproduce a more uniform process. In this way, while producing a bipolarconfiguration that may ensure sufficient chucking, the substrate supportmay also be used to provide additional process tuning with RF control atmultiple regions. Additionally, as illustrated, the electrode leads mayextend laterally through the chuck body at different vertical planes,which may limit leakage and interference.

While the figure illustrates a bottom RF power feed configuration, it isto be understood that any of the configurations illustrated throughoutthe present disclosure may similarly be produced with a top RF powerfeed in embodiments, such as based on RF source 307. For example, FIG.4C shows a schematic partial cross-sectional view of electrodearrangement 400 for an exemplary substrate support assembly according tosome embodiments of the present technology, and may illustrate the sameconfiguration for the electrodes, but utilizing a top RF power feedcontrol. For example, instead of utilizing RF power supplies as shown inFIG. 4B, in some embodiments a variable capacitor may be used to controlcurrent splitting through the various electrode sections. For example,instead of increasing power from a power supply to add power to theplasma, in some embodiments the control scheme may utilize a variablecapacitor and may increase the capacitance, which may increase currentflow through the plasma to the associated electrode in that region. Thismay similarly increase plasma density in the associated region andincrease deposition or etching in the region.

The present technology may similarly encompass other bipolar chuckconfigurations that can be incorporated within any of the substratesupports as previously described. FIG. 5A shows a schematic top view ofan electrode arrangement 500 for an exemplary substrate support assemblyaccording to some embodiments of the present technology. Arrangement 500may include any of the features or characteristics of arrangement 400,and may be incorporated in any substrate support in which bipolarchucking may be used, including any substrate support previouslydescribed. For example, arrangement 500 may include a first bipolarelectrode 505 and a second bipolar electrode 510. First bipolarelectrode 505 may include at least two separated mesh sections 506, andin the exemplary embodiment illustrated may include four mesh sections506, although it is to be understood that any number of mesh sectionsmay be included as previously discussed. Each mesh section 506 of thefirst bipolar electrode 505 may be separated from one another by a gap508. Each of the mesh sections 506 may be electrically coupled with asingle power supply as will be discussed below, and any number ofelectrode leads may be used to couple the individual sections atpositions 509, which may be anywhere along the mesh.

Second bipolar electrode 510 may include an annular mesh extending aboutthe mesh sections of the first bipolar electrode. Additionally, secondbipolar electrode 510 may include bridges 512 extending through the gapsbetween the separated mesh sections of the first bipolar electrode. Sucha configuration may provide both a capability for RF tuning as describedabove, as well as electrostatic chucking from the two bipolarelectrodes. This may improve edge region chucking in some embodiments.For example, some semiconductor processing may include processingincoming wafers characterized by an increased wafer bow at an edgeregion of the substrate. Ensuring complete clamping at an exterior edgemay ensure the substrate remains substantially flat during processing,which otherwise may increase processing non-uniformity or damage to thesubstrate. Because second bipolar electrode 510 may extend to or past anedge of a semiconductor substrate being processed, sufficient clampingmay be afforded with such a design including a second bipolar electrodeextending about the first bipolar electrode.

Additionally, the configuration of having the annular bipolar electrodeextending about the first bipolar electrode may facilitate radial tuningof RF as well. FIG. 5B shows a schematic partial cross-sectional view ofelectrode arrangement 500 for an exemplary substrate support assemblyaccording to some embodiments of the present technology, and may includeany feature, characteristic, or component as described above, and may beincluded in any substrate support described elsewhere. As shown in thecross section, second bipolar electrode 510 may extend about firstbipolar electrode 505, and include bridges 512 extending between themesh sections of first bipolar electrode 505. Similar to as describedabove, a first DC power supply 520 may be coupled with the first bipolarelectrode 505, and a second DC power supply 525 may be coupled with thesecond bipolar electrode. Additionally, a first RF power supply 530 maybe coupled with the first bipolar electrode 505 and a second RF powersupply 535 may be coupled with the second bipolar electrode 510. Becausethe second bipolar electrode may extend about the first bipolarelectrode 505, by operating the individual RF power supplies asdiscussed above, radial tuning of the plasma may be performed in theinner and outer zone, and the tuning may be performed prior toprocessing operations, or in situ during any process. As noted above,the configuration of FIG. 5B may also be produced with variablecapacitors for a top RF power feed as discussed previously, and as wouldbe readily appreciated by the skilled artisan.

FIG. 6A shows a schematic top view of an electrode arrangement 600 foran exemplary substrate support assembly according to some embodiments ofthe present technology. Arrangement 600 may include any of the featuresor characteristics of arrangement 400 or arrangement 500, and may beincorporated in any substrate support in which bipolar chucking may beused, including any substrate support previously described. For example,arrangement 600 may include a first bipolar electrode 605 and a secondbipolar electrode 610. First bipolar electrode 605 may include at leasttwo separated mesh sections 606, and in the exemplary embodimentillustrated may include four mesh sections 606, although it is to beunderstood that any number of mesh sections may be included aspreviously discussed. Each mesh section 606 of the first bipolarelectrode 605 may be separated from one another by a gap 608. Each ofthe mesh sections 606 may be electrically coupled with a single powersupply as will be discussed below, and any number of electrode leads maybe used to couple the individual sections at positions 609, which may beanywhere along the mesh.

Second bipolar electrode 610 may include an annular mesh extending aboutthe mesh sections of the first bipolar electrode. Additionally, secondbipolar electrode 610 may include bridges 612 extending through the gapsbetween the separated mesh sections of the first bipolar electrode. Athird electrode 615 may also be included in some embodiments, and whichmay be located or positioned radially outward from the first bipolarelectrode and the second bipolar electrode, and may extend about thebipolar electrodes as illustrated. In some embodiments the thirdelectrode may be included beneath the exterior region 347, as describedabove, or may otherwise be about an edge region of the substratesupport. Electrode leads may couple with the third electrode at one ormore positions 617 as illustrated. Although four such lead positions areillustrated, any number of leads may be provided in embodiments aspreviously described.

Such a configuration may provide both a greater capability for RF tuningas described above, as well as electrostatic chucking from the twobipolar electrodes. This may improve edge region chucking in someembodiments by providing three radial, concentric zones that may beindividually controlled. This configuration may provide both improvedchucking as well as improved radial RF tuning compared to conventionaltechnologies.

As noted above, an additional amount of radial tuning may be provided bythe configuration by utilizing three separate radial zones based on theelectrode locations. FIG. 6B shows a schematic partial cross-sectionalview of electrode arrangement 600 for an exemplary substrate supportassembly according to some embodiments of the present technology, andmay include any feature, characteristic, or component as describedabove, and may be included in any substrate support described elsewhere.As shown in the cross section, second bipolar electrode 610 may extendabout first bipolar electrode 605, and include bridges 612 extendingbetween the mesh sections of first bipolar electrode 605. Thirdelectrode 615 may be located radially outward from the second bipolarelectrode 610. Similar to as described above, a first DC power supply620 may be coupled with the first bipolar electrode 605, and a second DCpower supply 625 may be coupled with the second bipolar electrode.Additionally, a first RF power supply 630 may be coupled with the thirdelectrode 615, a second RF power supply 635 may be coupled with thefirst bipolar electrode 605, and a third RF power supply 640 may becoupled with the second bipolar electrode 610.

Because the second bipolar electrode may extend about the first bipolarelectrode 605, and the third electrode may extend about the secondbipolar electrode 615, by operating the individual RF power supplies asdiscussed above, radial tuning of the plasma may be performed in theinner zone, a middle zone, and an outer zone, and the tuning may beperformed prior to processing operations, or in situ during any process.Again as noted above, the configuration may utilize either a bottom RFpower feed or a top RF power feed utilizing variable capacitors aspreviously described in FIG. 4C. By utilizing bipolar configurationsaccording to embodiments of the present technology, consistent substrateplacement may be assured, while additionally providing process controlaffording radial tuning of plasma being generated.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “a heater” includes aplurality of such heaters, and reference to “the protrusion” includesreference to one or more protrusions and equivalents thereof known tothose skilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

1. A substrate support assembly comprising: an electrostatic chuck bodydefining a substrate support surface; a first bipolar electrode embeddedwithin the electrostatic chuck body beneath the substrate supportsurface; a second bipolar electrode embedded within the electrostaticchuck beneath the substrate support surface, wherein the first bipolarelectrode and the second bipolar electrode are separated by a gap; athird electrode positioned radially outward from and extending about thefirst bipolar electrode and the second bipolar electrode a connectionfor a first radio frequency (RF) power supply or variable capacitorcoupled with the first bipolar electrode and/or the second bipolarelectrode; and a connection for a second RF power supply or variablecapacitor coupled with the third bipolar electrode.
 2. The substratesupport assembly of claim 1, wherein the third electrode is ring-shaped.3. The substrate support assembly of claim 1, wherein the first bipolarelectrode occupies about half of an area inside the third electrode. 4.The substrate support assembly of claim 3, wherein the second bipolarelectrode occupies about a remaining half of the area inside the thirdelectrode.
 5. The substrate support assembly of claim 1, wherein theconnection for the first RF power supply or variable capacitor is alsoconfigured to receive positive and negative DC chucking voltages.
 6. Thesubstrate support assembly of claim 1, wherein the third electrodecomprises an annular mesh extending about the at least two mesh sectionsof the first bipolar electrode and the second bipolar electrode.
 7. Thesubstrate support assembly of claim 1, wherein a plurality of lead linesextending within the electrostatic chuck body couple the third electrodeto the connection for the second RF power supply or variable capacitor.8. The substrate support assembly of claim 1, wherein the electrostaticchuck body comprises a ceramic material.
 9. The substrate supportassembly of claim 1, wherein the ceramic material comprises aluminumnitride.
 10. The substrate support assembly of claim 1, wherein at leasta portion of the first bipolar electrode is characterized by a circularsector shape.
 11. The substrate support assembly of claim 1, wherein atleast a portion of the second bipolar electrode is characterized by acircular sector shape.
 12. The substrate support assembly of claim 1,further comprising a support stem coupled with the electrostatic chuckbody.